? semiconductor components industries, llc, 2015 october, 2015 ? rev. 0 1 publication order number: ntlus4c16n/d ntlus4c16n power mosfet 30 v, 11.7 a, single n?channel, 1.6x1.6x0.55 mm cool udfn6 package features ? udfn package with exposed drain pads for excellent thermal conduction ? low profile udfn 1.6 x 1.6 x 0.55 mm for board space saving ? ultra low r ds(on) ? these devices are pb?free, halogen free/bfr free and are rohs compliant applications ? power load switch ? wireless charging ? dc?dc converters maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain-to-source voltage v dss 30 v gate-to-source voltage v gs 12 v continuous drain current (note 1) steady state t a = 25 c i d 9.4 a t a = 85 c 6.8 t 5 s t a = 25 c 11.7 power dissipa- tion (note 1) steady state t a = 25 c p d 1.53 w t 5 s t a = 25 c 2.37 continuous drain current (note 2) steady state t a = 25 c i d 6.1 a t a = 85 c 4.4 power dissipation (note 2) t a = 25 c p d 0.65 w pulsed drain current t p = 10 s i dm 28 a mosfet operating junction and storage temperature t j , t stg -55 to 150 c source current (body diode) (note 1) i s 2.0 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). 2. surface-mounted on fr4 board using the minimum recommended pad size, 2 oz. cu. www. onsemi.com 30 v 13.3 m @ 4.5 v 11.4 m @ 10 v r ds(on) max i d max v (br)dss mosfet see detailed ordering and shipping information on page 3 o f this data sheet. ordering information 11.7 a 15.2 m @ 3.3 v 14.2 m @ 3.7 v 20 m @ 2.5 v n?channel mosfet udfn6 ( cool ) case 517au ah = specific device code m = date code = pb?free package ahm 1 marking diagram (top view) (note: microdot may be in either location) d s g pin connections pin 1 d s 1 2 3 6 5 4 d d s d d g d s 40 m @ 1.8 v
ntlus4c16n www. onsemi.com 2 thermal resistance ratings parameter symbol max unit junction-to-ambient ? steady state (note 3) r ja 81.7 c/w junction-to-ambient ? t 5 s (note 3) r ja 52.8 junction-to-ambient ? steady state min pad (note 4) r ja 193.6 3. surface-mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). 4. surface-mounted on fr4 board using the minimum recommended pad size, 2 oz. cu. electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max units off characteristics drain-to-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v drain-to-source breakdown voltage temperature coefficient v (br)dss /t j i d = 250 a, ref to 25 c 11 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 24 v t j = 25 c 1 a t j = 125 c 10 gate-to-source leakage current i gss v ds = 0 v, v gs = 12 v 100 na on characteristics (note 5) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 0.6 1.1 v negative threshold temp. coefficient v gs(th) /t j 3 mv/ c drain-to-source on resistance r ds(on) v gs = 10 v, i d = 8.0 a 9.3 11.4 m v gs = 4.5 v, i d = 5.0 a 10.7 13.3 v gs = 3.7 v, i d = 3.0 a 11.4 14.2 v gs = 3.3 v, i d = 3.0 a 12.0 15.2 v gs = 2.5 v, i d = 2.5 a 14.3 20 v gs = 1.8 v, i d = 2.5 a 26 40 forward transconductance g fs v ds = 1.5 v, i d = 5.0 a 31 s charges, capacitances & gate resistance input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = 15 v 690 pf output capacitance c oss 305 reverse transfer capacitance c rss 26 total gate charge q g(tot) v gs = 4.5 v, v ds = 15 v; i d = 5.0 a 7.5 nc threshold gate charge q g(th) 0.6 gate-to-source charge q gs 1.3 gate-to-drain charge q gd 1.4 switching characteristics, v gs = 4.5 v (note 6) turn-on delay time t d(on) v gs = 4.5 v, v dd = 15 v, i d = 5.0 a, r g = 1 6.0 ns rise time t r 14.5 turn-off delay time t d(off) 17.5 fall time t f 2.5 drain-source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 2.0 a t j = 25 c 0.7 1.0 v t j = 125 c 0.5 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 5. pulse test: pulse width 300 s, duty cycle 2%. 6. switching characteristics are independent of operating junction temperatures.
ntlus4c16n www. onsemi.com 3 electrical characteristics (t j = 25 c unless otherwise specified) parameter units max typ min test condition symbol drain-source diode characteristics reverse recovery time t rr v gs = 0 v, dis/dt = 100 a/ s, i s = 2.0 a 21 ns charge time t a 11 discharge time t b 10 reverse recovery charge q rr 10.5 nc product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 5. pulse test: pulse width 300 s, duty cycle 2%. 6. switching characteristics are independent of operating junction temperatures. device ordering information device package shipping ? NTLUS4C16NTAG udfn6 (pb?free) 3000 / tape & reel ntlus4c16ntbg udfn6 (pb?free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
ntlus4c16n www. onsemi.com 4 typical characteristics 8 10 12 14 16 18 20 22 24 26 28 30 12345678910 figure 1. on?region characteristics figure 2. transfer characteristics v ds , drain?to?source voltage (v) v gs , gate?t o?source voltage (v) figure 3. on?resistance vs. gate?to?source voltage figure 4. on?resistance vs. drain current and gate voltage v gs , gate?t o?source voltage (v) i d , drain current (a) 0 30 i d , drain current (a) i d , drain current (a) r ds(on) , drain?to?source resistance (m ) r ds(on) , drain?to?source resistance (m ) 10 v to 2.0 v t j = 25 c v gs = 1.8 v 1.6 v 1.4 v 1.2 v t j = 25 c t j = 125 c t j = ?55 c v ds = 5 v t j = 25 c i d = 8 a t j = 25 c v gs = 2.5 v 24 v gs = 3.7 v v gs = 4.5 v v gs = 10 v 0 5 10 15 20 25 10 v to 2.0 v 0 5 10 15 20 25 0 1 2 3 4 5 0 0.4 0.8 1.2 1.6 2 v gs = 3.3 v v gs = 1.8 v 28 26 24 22 20 18 16 14 12 10 8 222 20 18 46810 16 14 12 0.6 0.8 1.0 1.2 1.4 1.6 ?50 ?25 0 25 50 75 100 125 150 figure 5. on?resistance variation with temperature figure 6. drain?to?source leakage current vs. voltage t j , junction temperature ( c) v ds , drain?to?source voltage (v) r ds(on) , drain?to?source resistance (normalized) i dss , leakage (na) v gs = 10 v i d = 8 a t j = 85 c t j = 125 c t j = 150 c v gs = 0 v 10 100 1000 10000 100000 5 10152025
ntlus4c16n www. onsemi.com 5 typical characteristics 1.0 10.0 100.0 1000.0 1 10 100 10 100 1000 0 5 10 15 20 25 30 figure 7. capacitance variation figure 8. gate?to?source and drain?to?source voltage vs. total charge v ds , drain?to?source voltage (v) q g , total gate charge (nc) figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current r g , gate resistance ( ) v sd , source?to?drain voltage (v) c, capacitance (pf) v gs , gate?t o?source voltage (v ) t, time (ns) i s , source current (a) t j = 25 c v gs = 0 v f = 1 mhz c iss c oss c rss t j = 25 c v ds = 15 v i d = 5 a q gs q gd v dd = 15 v i d = 15 a v gs = 4.5 v t d(off) t d(on) t r t f t j = 25 c t j = 125 c v gs = 0 v 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 0123456789101112 v ds , drain?to?source voltage (v) q t 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 .7 figure 11. maximum rated forward biased safe operating area v ds , drain?to?source voltage (v) i d , drain current (a) v gs < 10 v t a = 25 c single pulse response dc 10 ms 1 ms r ds(on) limit thermal limit package limit 100 s 10 s 0.01 0.1 1 10 100 0.1 1 10 100 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 ?50 ?25 0 25 50 75 100 125 150 175 figure 12. v gs(th) vs. temperature t j , temperature ( c) v gs(th) , (v) i d = 250 a
ntlus4c16n www. onsemi.com 6 typical characteristics 0 50 100 150 200 250 300 350 400 1.e?04 1.e?03 1.e?02 1.e?01 1.e+00 1.e+01 1.e+02 1.e+03 figure 13. single pulse maximum power dissipation single pulse time ( c) power (w) 0.001 0.01 0.1 1 10 100 1000 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 figure 14. thermal response pulse time (sec) r ja , effective transient thermal response ( c/w) single pulse 50% duty cycle 20% 10% 5% 2% 1%
ntlus4c16n www. onsemi.com 7 package dimensions udfn6 1.6x1.6, 0.5p case 517au issue o notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.15 and 0.30 mm from terminal. 4. coplanarity applies to the exposed pad as well as the terminals. a b e d d2 e2 bottom view b e 6x 0.10 b 0.05 a c c note 3 2x 0.10 c pin one reference top view 2x 0.10 c note 4 a a1 (a3) 0.05 c 0.05 c c seating plane side view l 6x 1 3 4 6 dim min max millimeters a 0.45 0.55 a1 0.00 0.05 a3 0.13 ref b 0.20 0.30 d 1.60 bsc d2 0.15 0.25 e 1.60 bsc e2 0.57 0.67 e 0.50 bsc l 0.20 0.30 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. mounting footprint* l1 detail a 0.82 0.43 0.50 pitch 0.35 2x 1.90 dimensions: millimeters 0.32 1 6x soldermask defined l1 ??? 0.15 f 0.55 bsc g 0.25 bsc d1 0.62 0.72 d1 g f 0.10 b a c 0.10 b a c 0.16 0.28 0.68 on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ntlus4c15n/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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